Implanted Passive Pressure Sensor Interrogated with (Ultra)-Sound (iPPSIS)


Easy-to-use, short and long-term, minimally invasive, MR-safe approach for directly measuring the variation of intracranial pressure.

Key Benefits

  • A minimally invasive device that is compatible with MRI imaging for quantitatively measuring intracranial pressure.
  • A prototype has been developed showing the ability to measure shunt pressure with ultrasound.
  • Potential to improve the treatment of brain injury patients and reduce the high morbidity and mortality rates.

Market Summary

Current methods for measuring intracranial pressure are highly invasive and are limited to short-term monitoring, risk of infection, and restricted mobility of the subject. Thus, there has been substantial interest in developing less invasive techniques for assessing intracranial pressure (ICP). The market for ICP measuring devices has grown due to the rising incidence of neurological diseases and road accidents resulting in traumatic brain injuries. The described technology has the potential to overcome these limitations by using a minimally invasive method for measuring intracranial pressure.

Technical Summary

Researchers at Emory have developed an implantable Passive Pressure Sensor Interrogated with ultrasound (iPPSI) to quantitatively measure ICP. The device is comprised of PDMS, dry-film double-sided adhesive, and nitrile membranes. Thus far, the inventors have created a functioning prototype and demonstrated the implantable membrane-based sensor could quantitively measure intracranial pressure using ultrasound.

Developmental Stage

Prototype developed.

Patent Information

App Type Country Serial No. Patent No. File Date Issued Date Patent Status
PCT PCT PCT/US2023/034658   10/6/2023   Pending
Tech ID: 22112
Published: 10/13/2023